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FDS2672 - Fairchild Semiconductor

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FDS2672 N-Channel UltraFET

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ DC-DC conversion D SO-8 D D D 5 4 3 2 1 www.DataSheet4U.com6 7 Pin 1 S S S G 8 MOSFET Maximum Ratings TA = .

Features

„ Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A „ Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A „ Fast switching speed „ High performance trench technology for extremely low rDS(on) „ RoHS compliant tm General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ DC-DC conversion D SO-8 D D D 5 4 3 2 1 www.DataSheet4U.com6 7 Pin 1 S S S G 8 MOSFET Maximum Ratings TA = 25°C unless otherwise n.

The same part from a different manufacturer

Datasheet FDS2672 - ON Semiconductor FDS2672

This single N−Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailor.

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