This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(O.
• 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge (38nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
• Synchronous rectifier
• DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25oC unless otherwise noted
Parameter
Rati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS2070N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS2170N3 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDS2170N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS2570 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDS2572 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDS2572 |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDS2582 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDS2582 |
ON Semiconductor |
N-Channel MOSFET | |
9 | FDS2670 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDS2672 |
Fairchild Semiconductor |
N-Channel UltraFET | |
11 | FDS2672 |
ON Semiconductor |
N-Channel MOSFET | |
12 | FDS2734 |
Fairchild Semiconductor |
N-Channel MOSFET |