FDS2572 - Fairchild Semiconductor

FDS2572 N-Channel MOSFET

® UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • RDS(ON) = 0.040Ω (Typ.), VGS = 10V • Qg(TOT) = 29nC (Typ.), VGS = 10V • Low QRR Body Diode • Maximized effic.

Features

• RDS(ON) = 0.040Ω (Typ.), VGS = 10V
• Qg(TOT) = 29nC (Typ.), VGS = 10V
• Low QRR Body Diode
• Maximized efficiency at high frequencies
• UIS Rated Applications
•
•
•
• DC/DC converters Telecom and Data-Com Distributed Power Architectures 48-volt I/P Half-Bridge/Full-Bridge 24-volt Forward and Push-Pull topologies D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G G S S S S S S 7 8 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V, RθJA = 50 oC/W) Continuous (TC = .