FDPC8014S - Fairchild Semiconductor

FDPC8014S MOSFET

Q1: N-Channel „ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel „ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A „ Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for .

Features

General Description Q1: N-Channel „ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel „ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A „ Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement.