FDPC8011S - Fairchild Semiconductor

FDPC8011S MOSFET

Q1: N-Channel „ Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes .

Features

General Description Q1: N-Channel „ Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (.