Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses MOSFET Integration Enables Optimum Layout fo.
General Description Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of.
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDPC5030SG |
ON Semiconductor |
Dual N-Channel MOSFET | |
2 | FDPC4044 |
Fairchild Semiconductor |
MOSFET | |
3 | FDPC4044 |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDPC8011S |
Fairchild Semiconductor |
MOSFET | |
5 | FDPC8012S |
Fairchild Semiconductor |
MOSFET | |
6 | FDPC8013S |
Fairchild Semiconductor |
MOSFET | |
7 | FDPC8014S |
Fairchild Semiconductor |
MOSFET | |
8 | FDPC8016S |
Fairchild Semiconductor |
MOSFET | |
9 | FDPC8016S |
ON Semiconductor |
Dual N-Channel MOSFET | |
10 | FDP020N06B |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
11 | FDP023N08B |
Fairchild Semiconductor |
MOSFET | |
12 | FDP025N06 |
Fairchild Semiconductor |
MOSFET |