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UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniF.
• RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A
• Low Gate Charge (Typ. 23 nC )
• Low Crss (Typ. 14 pF )
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source .
FDP12N50NZ - INCHANGE
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switchin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDP12N50 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDP12N50F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDP12N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDP120AN15A0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 5 | FDP120N10 |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FDP120N10 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | FDP100N10 |
Fairchild Semiconductor |
MOSFET |
|
| 8 | FDP100N10 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | FDP10AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | FDP10N50F |
Fairchild Semiconductor |
MOSFET |
|
| 11 | FDP10N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDP10N60ZU |
Fairchild Semiconductor |
MOSFET |
|