FDP10N50F - Fairchild Semiconductor

FDP10N50F MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well .

Features

• RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A
• Low Gate Charge ( Typ. 18nC)
• Low Crss ( Typ. 10pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant January 2009 UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high.