These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well .
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP12N50 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP12N50NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDP12N50NZ |
INCHANGE |
N-Channel MOSFET | |
4 | FDP12N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDP120AN15A0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
6 | FDP120N10 |
Fairchild Semiconductor |
MOSFET | |
7 | FDP120N10 |
INCHANGE |
N-Channel MOSFET | |
8 | FDP100N10 |
Fairchild Semiconductor |
MOSFET | |
9 | FDP100N10 |
INCHANGE |
N-Channel MOSFET | |
10 | FDP10AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDP10N50F |
Fairchild Semiconductor |
MOSFET | |
12 | FDP10N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET |