FDN308P - Fairchild Semiconductor

FDN308P P-Channel MOSFET

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench .

Features

•
  –20 V,
  –1.5 A. RDS(ON) = 125 mΩ @ VGS =
  –4.5 V RDS(ON) = 190 mΩ @ VGS =
  –2.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications
• Power management
• Load switch
• Battery protection D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Parameter Ratings
  –20 ±12 (Note 1a) Units V V A W °C
  –1.5
  –10 .