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FDN308P |
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| Part Number | FDN308P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive volta... |
| Features |
• –20 V, –1.5 A RDS(on) = 125 mW @ VGS = –4.5 V RDS(on) = 190 mW @ VGS = –2.5 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−3 Provides Low RDS(on) and 30% Higher Power Handling Capability than SOT−23 in the Same Footprint • This is a Pb−Free and Halide Free Device Applications • Power Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current – Continuous (Note 1a) – Pulsed –20 V ±12 V A... |
| Document |
 FDN308P Data Sheet
PDF 287.57KB |
| Distributor | Stock | Price | Buy |
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