This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency. Applications Computing Communications General Pur.
Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant January 2013 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable .
Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS3660AS |
Fairchild Semiconductor |
MOSFET | |
2 | FDMS3660S |
Fairchild Semiconductor |
Asymmetric Dual N-Channel MOSFET | |
3 | FDMS3660S |
ON Semiconductor |
Asymmetric Dual N-Channel MOSFET | |
4 | FDMS3662 |
Fairchild Semiconductor |
MOSFET | |
5 | FDMS3662 |
ON Semiconductor |
N-Channel MOSFET | |
6 | FDMS3664S |
Fairchild Semiconductor |
MOSFET | |
7 | FDMS3664S |
ON Semiconductor |
Dual N-Channel MOSFET | |
8 | FDMS3668S |
Fairchild Semiconductor |
MOSFET | |
9 | FDMS3600AS |
Fairchild Semiconductor |
MOSFET | |
10 | FDMS3600S |
Fairchild Semiconductor |
MOSFET | |
11 | FDMS3602AS |
Fairchild Semiconductor |
MOSFET | |
12 | FDMS3602S |
Fairchild Semiconductor |
MOSFET |