FDMS3669S |
Part Number | FDMS3669S |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10... |
Features |
Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck con... |
Document |
FDMS3669S Data Sheet
PDF 663.92KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS3669S |
Fairchild Semiconductor |
MOSFET | |
2 | FDMS3660AS |
Fairchild Semiconductor |
MOSFET | |
3 | FDMS3660S |
Fairchild Semiconductor |
Asymmetric Dual N-Channel MOSFET | |
4 | FDMS3660S |
ON Semiconductor |
Asymmetric Dual N-Channel MOSFET | |
5 | FDMS3662 |
Fairchild Semiconductor |
MOSFET |