FDMS36101L_F085 - Fairchild Semiconductor

FDMS36101L_F085 MOSFET

FDMS36101L_F085 N-Channel Power Trench® MOSFET FDMS36101L_F085 N-Channel Power Trench® MOSFET 100V, 38A, 26mΩ June 2013 Features „ Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Mo.

Features

„ Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Dra.