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FDMS3602S |
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| Part Number | FDMS3602S |
| Manufacturer | Fairchild Semiconductor |
| Description | Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.4 mΩ at ... |
| Features |
General Description
Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy plac... |
| Document |
 FDMS3602S Data Sheet
PDF 597.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS3602AS |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMS3602S |
ON Semiconductor |
25V Asymmetric Dual N-Channel MOSFET |
|
| 3 | FDMS3600AS |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMS3600S |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDMS3604AS |
Fairchild Semiconductor |
MOSFET |
|