FDMC86116LZ - ON Semiconductor

FDMC86116LZ N-Channel Power MOSFET

This N−Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A • .

Features

• Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A
• Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
• HBM ESD Protection Level > 3 kV Typical (Note 1)
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• DC−DC Conversion DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DQ FDMC3612−L701 PIN ASSIGNMENT S1 S2 S3 G4 8D 7D 6D 5D 1. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. .