FDMC86102L - ON Semiconductor

FDMC86102L N-Channel MOSFET

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A • Max RDS(on) = 34 mW at VGS = 4.5 V, ID.

Features

• Shielded Gate MOSFET Technology
• Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
• Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
• Low Profile − 1 mm Max in Power 33
• Pb−Free, Halide Free and RoHS Compliant Applications
• DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous, TC = 25°C 18 Continuous, TA = 25°C (Note 1a) 7 Pulsed 30 EAS Single Pulse Avalanche Energy (Note 3) 63 mJ PD TJ, TSTG Power Dissipation: TC = 25°C TA = 2.