Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 °.
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain .
FDMC86102 - ON Semiconductor
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC86102L |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC86102L |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMC86102LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 4 | FDMC86102LZ |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC86106LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 6 | FDMC86116LZ |
Fairchild Semiconductor |
MOSFET |
|
| 7 | FDMC86116LZ |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | FDMC86116LZ-L701 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | FDMC86139P |
Fairchild Semiconductor |
MOSFET |
|
| 10 | FDMC86139P |
ON Semiconductor |
P-Channel MOSFET |
|
| 11 | FDMC86160 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 12 | FDMC86160 |
ON Semiconductor |
N-Channel MOSFET |
|