This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible..
General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. tm Max rDS(on) = 120 mΩ at VGS = -4.5 V, ID = -3.0 A Max rDS(on) = 160 mΩ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMA1027P |
Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET | |
2 | FDMA1027P |
ON Semiconductor |
Dual P-Channel MOSFET | |
3 | FDMA1023PZ |
Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET | |
4 | FDMA1023PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
5 | FDMA1024NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET | |
6 | FDMA1024NZ |
ON Semiconductor |
Dual N-Channel MOSFET | |
7 | FDMA1025P |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
8 | FDMA1028NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET | |
9 | FDMA1028NZ |
ON Semiconductor |
Dual N-Channel Power MOSFET | |
10 | FDMA1029PZ |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
11 | FDMA1029PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
12 | FDMA1032CZ |
Fairchild Semiconductor |
Complementary PowerTrench MOSFET |