This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible..
two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 G1 D2 D2 S1
Features
•
–3.0 A,
–20V. RDS(ON) = 120 mΩ @ VGS =
–4.5V RDS(ON) = 160 mΩ @ VGS =
–2.5V RDS(ON) = 240 mΩ @ VGS =
–1.8V
• Low profile
– 0.8 mm maximum
– in the new package MicroFET 2x2 mm
1 2 3
6 5 4
D1 G2 S2
D1 G2 S2
MicroFET
Absolute .
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMA1027PT |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
2 | FDMA1023PZ |
Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET | |
3 | FDMA1023PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
4 | FDMA1024NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET | |
5 | FDMA1024NZ |
ON Semiconductor |
Dual N-Channel MOSFET | |
6 | FDMA1025P |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
7 | FDMA1028NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET | |
8 | FDMA1028NZ |
ON Semiconductor |
Dual N-Channel Power MOSFET | |
9 | FDMA1029PZ |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
10 | FDMA1029PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
11 | FDMA1032CZ |
Fairchild Semiconductor |
Complementary PowerTrench MOSFET | |
12 | FDMA1032CZ |
ON Semiconductor |
Dual-Channel MOSFET |