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FDMA1024NZ - Fairchild Semiconductor

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FDMA1024NZ Dual N-Channel PowerTrench MOSFET

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well.

Features

„ Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A „ Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A „ Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A „ Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode.

The same part from a different manufacturer

Datasheet FDMA1024NZ - ON Semiconductor FDMA1024NZ

This is designed specifically as a single package solution for dual switching requirements in cellular handset and other.

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