This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well.
Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode.
This is designed specifically as a single package solution for dual switching requirements in cellular handset and other.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMA1023PZ |
Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET | |
2 | FDMA1023PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
3 | FDMA1025P |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
4 | FDMA1027P |
Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET | |
5 | FDMA1027P |
ON Semiconductor |
Dual P-Channel MOSFET | |
6 | FDMA1027PT |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
7 | FDMA1028NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET | |
8 | FDMA1028NZ |
ON Semiconductor |
Dual N-Channel Power MOSFET | |
9 | FDMA1029PZ |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
10 | FDMA1029PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
11 | FDMA1032CZ |
Fairchild Semiconductor |
Complementary PowerTrench MOSFET | |
12 | FDMA1032CZ |
ON Semiconductor |
Dual-Channel MOSFET |