FDD8796 - Fairchild Semiconductor

FDD8796 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture Fea.

Features

„ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V „ Low gate resistance „ Avalanche rated and 100% tested AD FREE I LE „ RoHS Compliant D G D G DS I-PAK S G (TO-251AA) Short Lead I-PAK S MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Package Limited) ID -Continuous (Die Limited) -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage.