FDD8778 - Fairchild Semiconductor

FDD8778 N-Channel MOSFET

„ Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V „ Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opti.

Features

General Description „ Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V „ Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ RoHS compliant AD FREE I Application LE „ DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D G G DS I-PAK .