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These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application Inverter H-Bridge D1 D2 D1/D2 G2 S2 G1 S1 G1 S1 Dual DPAK 4L N-Channel MOSFET Maximum Rati.
Q1: N-Channel Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A Fast switching speed Qualified to AEC Q101 RoHS Compliant General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application Inverter H-Bridge D1 D2 D1/D2 G2 S2.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDD8424H |
Fairchild Semiconductor |
Dual N & P-Channel PowerTrench MOSFET |
|
| 2 | FDD8426H |
Fairchild Semiconductor |
Dual P and N-Channel MOSFET |
|
| 3 | FDD8444 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDD8444-F085 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | FDD8444L_F085 |
FAIRCHILD |
N-Channel PowerTrench MOSFET |
|
| 6 | FDD8445 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FDD8445_F085 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 8 | FDD8447L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FDD8451 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | FDD8453LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 11 | FDD8453LZ_F085 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 12 | FDD850N10L |
Fairchild Semiconductor |
MOSFET |
|