These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well.
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDD5N50 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDD5N50 |
Fairchild Semiconductor |
N-Channel UniFET MOSFET | |
3 | FDD5N50F |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDD5N50F |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDD5N50FTM_WS |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDD5N50NZ |
Fairchild Semiconductor |
MOSFET | |
7 | FDD5N50NZF |
Fairchild Semiconductor |
MOSFET | |
8 | FDD5N50U |
Fairchild Semiconductor |
MOSFET | |
9 | FDD5N50U |
ON Semiconductor |
N-Channel MOSFET | |
10 | FDD5N60NZ |
Fairchild Semiconductor |
MOSFET | |
11 | FDD5202P |
Fairchild Semiconductor |
P-Channel MOSFET | |
12 | FDD5353 |
Fairchild Semiconductor |
MOSFET |