This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and TM in a small SuperSot –6 package. It uses Fairchild’s advanced low voltage PowerTrench process. The RDS(ON) is 750 mΩ per the switch @ VGS 1.8Vand is optimized for battery power management applications. Features • –1 A, 8 V. RDS(ON) = 350 mΩ @ VGS = –4.5 V RDS(ON.
•
–1 A, 8 V. RDS(ON) = 350 mΩ @ VGS =
–4.5 V RDS(ON) = 500 mΩ @ VGS =
–2.5 V RDS(ON) = 750 mΩ @ VGS =
–1.8 V
• N-Channel MOSFET includes Zener protection for ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely low RDS(ON)
Applications
• Battery management/Charger Application
• Accessory load switching
S1 D1
D2
Vin
1 2 3
6 5 4
S1/S2
On/Off
Vout GND
IN
V DROP
OUT
G2
SuperSOT
Pin 1
TM
-6
G1
S2
G1/G2
ON/OFF
SuperSOT™-6
Equivalent Circuit
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VIN VON ILoad PD TJ, TSTG Input Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDC6330L |
Fairchild Semiconductor |
Integrated Load Switch | |
2 | FDC6330L |
ON Semiconductor |
Integrated Load Switch | |
3 | FDC6331L |
Fairchild Semiconductor |
Integrated Load Switch | |
4 | FDC6331L |
ON Semiconductor |
Integrated Load Switch | |
5 | FDC6333C |
Fairchild Semiconductor |
30V N & P-Channel PowerTrench MOSFETs | |
6 | FDC6333C |
On Semiconductor |
N- & P-Channel Power MOSFET | |
7 | FDC633N |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET | |
9 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET | |
10 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel | |
11 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET | |
12 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |