This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P -Channel power MOSFET (Q2) in one tiny SuperSOTT M-6 package. Applications • Load switch • Power management.
•
–2.8 A,
–8 V. RDS(ON) = 55 mΩ @ V GS =
–4.5 V RDS(ON) = 70 mΩ @ V GS =
–2.5 V RDS(ON) = 100 mΩ @ V GS =
–1.8 V
• Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely low RDS(ON)
D2 S1 D1
Vin,R1 ON/OFF
Q2
Equivalent Circuit
3 2
Q1
4 5 6
Vout,C1 IN Vout,C1 R2
+ V
– DROP
OUT
G2
SuperSOT Pin 1
TM
-6
S2 G1
R1,C1
1
See Application Circuit
ON/OFF
SuperSOT™-6
Absolute Maximum Ratings
Symbol V IN V ON/OFF ILoad PD TJ , TSTG
TA=25oC unless otherwise noted
Parameter Maximum Input Voltage High level .
This device is particularly suited for compact power management in portable electronic equipment where 2.5 V to 8 V inpu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDC6330L |
Fairchild Semiconductor |
Integrated Load Switch | |
2 | FDC6330L |
ON Semiconductor |
Integrated Load Switch | |
3 | FDC6332L |
Fairchild Semiconductor |
Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET | |
4 | FDC6333C |
Fairchild Semiconductor |
30V N & P-Channel PowerTrench MOSFETs | |
5 | FDC6333C |
On Semiconductor |
N- & P-Channel Power MOSFET | |
6 | FDC633N |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET | |
8 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET | |
9 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel | |
10 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET | |
11 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET | |
12 | FDC6304P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |