FDBL0260N100 N-Channel PowerTrench® MOSFET www.onsemi.com FDBL0260N100 N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.6 mΩ Max RDS(on) = 2.6 mΩ at VGS = 10 V, ID = 80 A Applications Max Qg(tot) = 116 nC at VGS = 10 V, ID = 80 A UIS Capability RoHS Compliant Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Op.
5 to +175 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 0.6 (Note 1a) 43 °C/W Device Marking FDBL0260N100 Device FDBL0260N100 Package MO-299A Reel Size - Tape Width - Quantity - Semiconductor Components Industries, LLC, 2016 December, 2016, Rev. 1.1 1 Publication Order Number: FDBL0260N100/D FDBL0260N100 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units Off Character.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDBL0210N80 |
Fairchild Semiconductor |
MOSFET | |
2 | FDBL0065N40 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
3 | FDBL0090N40 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
4 | FDBL0110N60 |
Fairchild Semiconductor |
MOSFET | |
5 | FDBL0120N40 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
6 | FDBL0150N80 |
Fairchild Semiconductor |
MOSFET | |
7 | FDBL0330N80 |
Fairchild Semiconductor |
MOSFET | |
8 | FDBL0630N150 |
ON Semiconductor |
N-Channel MOSFET | |
9 | FDBL0630N150 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
10 | FDBL86210_F085 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
11 | FDBL86361_F085 |
Fairchild Semiconductor |
MOSFET | |
12 | FDBL86363_F085 |
Fairchild Semiconductor |
MOSFET |