FDBL0210N80 - Fairchild Semiconductor

FDBL0210N80 MOSFET

FDBL0210N80 N-Channel PowerTrench® MOSFET FDBL0210N80 N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.0 mΩ April 2015 Features „ Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant Applications „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automations „ Batter.

Features

„ Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant Applications „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automations „ Battery Operated tools „ Battery Protection „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch D G S For current package drawing, please refer to the Fairchild web‐ site at http://www.fairchildsemi.com/dwg/PS/PSOF08A.pdf. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-So.