FDBL86210_F085 - Fairchild Semiconductor

FDBL86210_F085 N-Channel PowerTrench MOSFET

FDBL86210_F085 N-Channel Power Trench® MOSFET FDBL86210_F085 N-Channel Power Trench® MOSFET 150V, 169A, 6.3mΩ January 2014 Features „ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and .

Features

„ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems D G S For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Puls.