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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor.
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 260mΩ(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switch-Mode and Resonant-Mode Power Supplies
·DC-DC Converters
·AC and DC Motor Drives
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Plused
30
A
PD
Total Dissipation @TC=25℃
90
W
Tj
Max. O.
FCP260N65S3 - ON Semiconductor
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing cha.
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|---|---|---|---|---|
| 1 | FCP260N60E |
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| 2 | FCP20N60 |
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N-Channel MOSFET |
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| 3 | FCP22N60N |
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| 4 | FCP25N60N |
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N-Channel MOSFET |
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| 5 | FCP290N80 |
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| 6 | FCP290N80 |
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| 7 | FCP067N65S3 |
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| 8 | FCP067N65S3 |
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| 9 | FCP099N60E |
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| 10 | FCP099N60E |
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| 11 | FCP099N65S3 |
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| 12 | FCP099N65S3 |
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|