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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCP099N65S3 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOL.
·With TO-220 packaging
·Low switching loss
·Ultra low gate charge
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·DC-DC converters
·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
30 19
75
PD
Total Dissipation
227
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V.
FCP099N65S3 - ON Semiconductor
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing cha.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCP099N60E |
INCHANGE |
N-Channel MOSFET |
|
| 2 | FCP099N60E |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FCP067N65S3 |
ON Semiconductor |
Power MOSFET |
|
| 4 | FCP067N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FCP104N60 |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FCP104N60F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FCP104N60F |
INCHANGE |
N-Channel MOSFET |
|
| 8 | FCP110N65F |
Fairchild Semiconductor |
MOSFET |
|
| 9 | FCP11N60 |
Fairchild Semiconductor |
SuperFET MOSFET |
|
| 10 | FCP11N60F |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 11 | FCP11N60N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FCP11N60N |
INCHANGE |
N-Channel MOSFET |
|