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The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET.
• BVDSS > 650 V @ TJ = 150oC
• RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A
• Ultra Low Gate Charge (Typ. Qg = 45 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• LCD/LED/PDP TV
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCP20N60 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FCP25N60N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FCP260N60E |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FCP260N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FCP260N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FCP290N80 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FCP290N80 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | FCP067N65S3 |
ON Semiconductor |
Power MOSFET |
|
| 9 | FCP067N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FCP099N60E |
INCHANGE |
N-Channel MOSFET |
|
| 11 | FCP099N60E |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FCP099N65S3 |
INCHANGE |
N-Channel MOSFET |
|