www.DataSheet4U.com PD- 94062B SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance Ver.
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
–
–
– 0.50
–
–
–
–
–
–
Max.
1.04
–
–
– 62 40
Units
°C/W
Notes
through
are on page 11
www.irf.com
1
11/15/01
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IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20
–
–
–
–
–
– Static Drain-to-Source On-Resistance
–
–
– Gate Threshold Voltage 1.0
–
–
– D.
F3711S-VB F3711S-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F3710 |
VBsemi |
N-Channel MOSFET | |
2 | F3710S |
International Rectifier |
IRF3710S | |
3 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
4 | F3003 |
CSF |
Tube | |
5 | F3007S |
VBsemi |
N-Channel MOSFET | |
6 | F3027 |
CSF |
Tube | |
7 | F30D05 |
Mospec Semiconductor |
Power Rectifier | |
8 | F30D10 |
Mospec Semiconductor |
Power Rectifier | |
9 | F30D15 |
Mospec Semiconductor |
Power Rectifier | |
10 | F30D20 |
Mospec Semiconductor |
Power Rectifier | |
11 | F30D30 |
Mospec Semiconductor |
POWER RECTIFIERS | |
12 | F30D40 |
Mospec Semiconductor |
POWER RECTIFIERS |