F3710-VB F3710-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A) 70a TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters D RoHS COMPLIANT GD S Top View G .
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
• 100 % Rg Tested
APPLICATIONS
• Isolated DC/DC Converters
D
RoHS
COMPLIANT
GD S Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current Single Pulse Avalanche Energyb
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TA = 25 °Cd
PD
Operating Junction and Storage Temperat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F3710S |
International Rectifier |
IRF3710S | |
2 | F3711S |
VBsemi |
N-Channel MOSFET | |
3 | F3711S |
International Rectifier |
IRF3711S | |
4 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
5 | F3003 |
CSF |
Tube | |
6 | F3007S |
VBsemi |
N-Channel MOSFET | |
7 | F3027 |
CSF |
Tube | |
8 | F30D05 |
Mospec Semiconductor |
Power Rectifier | |
9 | F30D10 |
Mospec Semiconductor |
Power Rectifier | |
10 | F30D15 |
Mospec Semiconductor |
Power Rectifier | |
11 | F30D20 |
Mospec Semiconductor |
Power Rectifier | |
12 | F30D30 |
Mospec Semiconductor |
POWER RECTIFIERS |