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F3007S N-Channel MOSFET

F3007S-VB F3007S-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 6 mΩ 10 mΩ 120 A Single TO-263 FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance ple.

Features


• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see D G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID TC = 125 °C Pulsed Drain Current (t = 100 μs) IDM Avalanche Current Single Avalanche Energy a IAS L = 0.1 mH EAS Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C T.

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