F3007S-VB F3007S-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 6 mΩ 10 mΩ 120 A Single TO-263 FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance ple.
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
D
G
Top View
S D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C ID
TC = 125 °C
Pulsed Drain Current (t = 100 μs)
IDM
Avalanche Current Single Avalanche Energy a
IAS L = 0.1 mH
EAS
Maximum Power Dissipation a Operating Junction and Storage Temperature Range
TC = 25 °C T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
2 | F3003 |
CSF |
Tube | |
3 | F3027 |
CSF |
Tube | |
4 | F30D05 |
Mospec Semiconductor |
Power Rectifier | |
5 | F30D10 |
Mospec Semiconductor |
Power Rectifier | |
6 | F30D15 |
Mospec Semiconductor |
Power Rectifier | |
7 | F30D20 |
Mospec Semiconductor |
Power Rectifier | |
8 | F30D30 |
Mospec Semiconductor |
POWER RECTIFIERS | |
9 | F30D40 |
Mospec Semiconductor |
POWER RECTIFIERS | |
10 | F30D50 |
Mospec Semiconductor |
POWER RECTIFIERS | |
11 | F30D60 |
Mospec Semiconductor |
POWER RECTIFIERS | |
12 | F30NM60 |
UTC |
N-CHANNEL MOSFET |