EMZ8 / UMZ8N Transistors Power management (dual transistors) EMZ8 / UMZ8N zFeature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. zExternal dimensions (Unit : mm) EMZ8 0.22 (4) (5) (6) (3) (2) 0.13 Each lead has same dimensions (3) (2) (1) ROHM : EMT6 EIAJ : 0.65 1.3 0.7 0.65 Tr2 Tr1 (4) (3) UMZ8N 0.2 0.5 zEquivalent circuits .
es) EMZ8 EMT6 Z8 T2R 8000 UMZ8N UMT6 Z8 TR 3000 (1) Rev.A 2.0 (2) 1/2 EMZ8 / UMZ8N Transistors zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −0.1 − 260 6.5 Max. − − − −0.1 −0.1 −0.25 680 − − Unit V V V µA µA V − MHz pF IC = −10µA IC = −1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMZ1 |
Rohm |
General purpose transistor (dual transistors) | |
2 | EMZ1 |
SeCoS |
Dual Transistors | |
3 | EMZ1DXV6T1 |
ON Semiconductor |
Dual General Purpose Transistors | |
4 | EMZ1DXV6T5 |
ON Semiconductor |
Dual General Purpose Transistors | |
5 | EMZ2 |
Rohm |
Dual Transistor | |
6 | EMZ51 |
ROHM |
General Purpose Transister | |
7 | EMZ52 |
ROHM |
General Purpose Transister | |
8 | EMZ6.8E |
Rohm |
Zener diode | |
9 | EMZ6.8JA |
Rohm |
Zener diode | |
10 | EMZ7 |
Rohm |
Dual Transistor | |
11 | EMZB08P03G |
Excelliance MOS |
P?Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | EMZB08P03H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |