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EMZ6.8JA Diodes Zener diode EMZ6.8JA zApplications Voltage regulation (Common anode dual chips) zDimensions (Unit : mm) 1.6±0.1 0.22±0.05 zLand size figure (Unit : mm) 0.4 0.45 0.15 0.25 0.25 0.15 0.3 0.13±0.05 1.2±0.1 1.6±0.1 zFeatures 1) Ultra small mold type. (TEMD5) 2) High reliability. (5) (4) 0～0.1 0.5 (1) (2) (3) 0.5 EMD5 0.45 max zConstru.
1) Ultra small mold type. (TEMD5) 2) High reliability.
(5)
(4)
0～0.1
0.5
(1) (2) (3)
0.5
EMD5
0.45 max
zConstruction Silicon epitaxial planar
0.5
0.5 1.0±0.1
zStructure
ROHM : TEMD5 dot (year week factory)
zTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05 φ1.5±0.1 0 1.75±0.1 0.3±0.1
3.5±0.05
1.65±0.1
5.5±0.2
8.0±0.2
1.65±0.1
1PIN
4.0±0.1
φ0.8±0.1
0～0.1
0.65±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter Power dissipation (
*1) Junction temperature Storage temperature (
*1) Total four elements
Symbol P Tj Tstg
Limits 150 150 -55 to +150
Unit mW ℃ ℃
zElectrica.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMZ6.8E |
Rohm |
Zener diode |
|
| 2 | EMZ1 |
Rohm |
General purpose transistor (dual transistors) |
|
| 3 | EMZ1 |
SeCoS |
Dual Transistors |
|
| 4 | EMZ1DXV6T1 |
ON Semiconductor |
Dual General Purpose Transistors |
|
| 5 | EMZ1DXV6T5 |
ON Semiconductor |
Dual General Purpose Transistors |
|
| 6 | EMZ2 |
Rohm |
Dual Transistor |
|
| 7 | EMZ51 |
ROHM |
General Purpose Transister |
|
| 8 | EMZ52 |
ROHM |
General Purpose Transister |
|
| 9 | EMZ7 |
Rohm |
Dual Transistor |
|
| 10 | EMZ8 |
Rohm |
Power management |
|
| 11 | EMZB08P03G |
Excelliance MOS |
P?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 12 | EMZB08P03H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|