EMZB08P03G - Excelliance MOS

EMZB08P03G P?Channel Logic Level Enhancement Mode Field Effect Transistor

EMZB08P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 8.5mΩ ID ‐15A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current .

Features

W °C UNIT °C / W 2015/8/5 p.1 EMZB08P03G ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±12V VDS = ‐24V, VGS = 0V VDS = ‐20V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐10V VGS = ‐10V, ID = ‐12A VGS = ‐4.5V, ID = ‐.