EMF44P03JS - Excelliance MOS

EMF44P03JS P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 44mΩ ID -4A P Channel MOSFET Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °.

Features

ource Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±12V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -4.5V VGS = -10V, ID = -4.5A VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3A VDS = -5V, ID = -4A DYNAMIC -30 V -0.3 -0.75 -1.2 ±100 nA -1 A -10 -4 A 32 38 mΩ 39 44 60 75 13 S Input Capacitance Output Capacitance Reverse Tra.