EMDA2N20A - Excelliance MOS

EMDA2N20A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 200V D RDSON (MAX.) 120mΩ ID 18A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = .

Features

AMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 160V, VGS = 0V VDS = 130V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS = 10V, ID = 10.5A VGS = 7V, ID = 10.5A VDS = 5V, ID = 10.5A DYNAMIC 200 V 2.0 3.2 4.5 ±100 nA 1 A 25 18 A 105 120 mΩ 115 140 12 S Input Cap.