EMD02N06TL8 - Excelliance MOS

EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=7V ID @TC=25℃ 1.9mΩ 2.5mΩ 270A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage TC = 25 °C Continuous Drain Current1 Pulsed Drain Current1 .

Features

XIMUM Junction-to-Case RθJC 0.6 Junction-to-Ambient3 RθJA 40 1Pulse width limited by maximum junction temperature. 2Duty cycle ≦ 1％ 340°C / W when mounted on a 1 in2 pad of 2 oz copper. UNIT V A mJ W W ℃ UNIT °C / W 2020/4/1 P.1 EMD02N06TL8 ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = 250uA 60 V.