EMD02N10TL8 - Excelliance MOS

EMD02N10TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 100V RDSON (TYP.)@VGS=10V RDSON (TYP.)@VGS=7V 2.2mΩ 2.8mΩ ID @TC=25℃ 304.0A ID @TA=25℃ 29.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Cur.

Features

-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 342°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test EMD02N10TL8 LIMITS ±20 304 192 29 23 761 88 387.2 193.6 313 125 3 1.9 -55 to 150 UNIT V A mJ W W °C MAXIMUM 0.4 42 UNIT °C/W 2020/10/5 P.1 A.0 EMD02N10TL8 ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Sour.