www.DataSheet4U.com EIC1415A-8 ISSUED DATE: 09/06/2007 14.40-15.40GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.40–15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 26% Power Added Efficiency -42 dBc IM3 at Po = 28.5 dBm SCL 100% Tested for DC, RF.
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• 14.40
–15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 26% Power Added Efficiency -42 dBc IM3 at Po = 28.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f =14.4-15.4GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f =14.4-15.4GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f =14.4-15.4GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compress.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC1415A-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
2 | EIC1415-2 |
Excelics Semiconductor |
Internally Matched Power FET | |
3 | EIC1415-3 |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIC1415-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIC1414-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
6 | EIC1414-2 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC1414-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC1414-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
10 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET |