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Pin Symbol A0-A14 A15A A15B WE CE1 CE2 G DQ0-15 Vcc Vss Type Input Input Input Input Input Input Input Input/Output Supply Ground Description Addresses Addresses: A15 on Bank 'A' of memory Addresses: A15 on Bank 'B' of memory Write Enable: This active LOW input allows a full 16-bit WRITE to occur. Chip Enable: This active LOW input is used to enable the 'A'.
DSP Memory Solution
• Texas Instruments TMS320C54x 3.3V Operating Supply Voltage Access Times of 10, 12 and 15ns Single Write Control and Output Enable Lines One Chip Enable Line per Memory Bank 50% Space Savings vs. Monolithic TSOPs Upgrade Path Available in Same Footprint Multiple VCC and VSS Pins Reduced Inductance and Capacitance 74 pin BGA, JEDEC MO-151 The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access times as fa.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EDI8L24128C |
White Electronic |
128Kx24 Asynchronous SRAM |
|
| 2 | EDI8L24129V |
White Electronic |
128Kx24 SRAM 3.3 Volt |
|
| 3 | EDI8L32128C |
ETC |
128Kx32 CMOS High Speed Static RAM |
|
| 4 | EDI8L32256C |
EDI |
Static Ram |
|
| 5 | EDI8L32512C |
ETC |
512K X 32 CMOS HIGH SPEED STATIC RAM |
|
| 6 | EDI8L3265C |
WEDC |
64Kx32 CMOS High Speed |
|
| 7 | EDI81256C |
EDI |
High Speed 256K Monolithic SRAM |
|
| 8 | EDI81256P |
EDI |
High Speed 256K Monolithic SRAM |
|
| 9 | EDI816256CA |
White Electronic Designs Corporation |
256Kx16 MONOLITHIC SRAM |
|
| 10 | EDI816256CA |
Microsemi |
256K x 16 Monolithic SRAM |
|
| 11 | EDI8464C |
EDI |
High Speed 256K Monolithic SRAM |
|
| 12 | EDI8464P |
EDI |
High Speed 256K Monolithic SRAM |
|