The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5V supply voltage and control lines make the device ideal for creating floating point DSP memory solutions. The device can be configured as a 512K x 32 and used to.
512K x 32 CMOS High Speed Static RAM
n DSP Memory Solution Motorola DSP96002 Analog SHARC DSP Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array Fast Access Times: 12
*, 15, 17, and 20ns TTL Compatible Inputs and Outputs Fully Static, No Clocks n Surface Mount Package 68 Lead PLCC, No. 99 JEDEC M0-47AE Small Footprint, 0.990 Sq. In. Multiple Ground Pins for Maximum Noise Immunity n Single +5V (±5%) Supply Operation
* Advance Information.
FIG. 1
DQ16 A18 A17 E3 E2 E1 E0 NC VCC NC NC G W A16 A15 A14 DQ15
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
DQ17 DQ18 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EDI8L32128C |
ETC |
128Kx32 CMOS High Speed Static RAM | |
2 | EDI8L32256C |
EDI |
Static Ram | |
3 | EDI8L3265C |
WEDC |
64Kx32 CMOS High Speed | |
4 | EDI8L21664V |
EDI |
External SRAM Memory Solution | |
5 | EDI8L24128C |
White Electronic |
128Kx24 Asynchronous SRAM | |
6 | EDI8L24129V |
White Electronic |
128Kx24 SRAM 3.3 Volt | |
7 | EDI81256C |
EDI |
High Speed 256K Monolithic SRAM | |
8 | EDI81256P |
EDI |
High Speed 256K Monolithic SRAM | |
9 | EDI816256CA |
White Electronic Designs Corporation |
256Kx16 MONOLITHIC SRAM | |
10 | EDI816256CA |
Microsemi |
256K x 16 Monolithic SRAM | |
11 | EDI8464C |
EDI |
High Speed 256K Monolithic SRAM | |
12 | EDI8464P |
EDI |
High Speed 256K Monolithic SRAM |