EDI8L21664V EDI External SRAM Memory Solution Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

EDI8L21664V

EDI
EDI8L21664V
EDI8L21664V EDI8L21664V
zoom Click to view a larger image
Part Number EDI8L21664V
Manufacturer EDI
Description Pin Symbol A0-A14 A15A A15B WE CE1 CE2 G DQ0-15 Vcc Vss Type Input Input Input Input Input Input Input Input/Output Supply Ground Description Addresses Addresses: A15 on Bank 'A' of memory Addresses:...
Features DSP Memory Solution
• Texas Instruments TMS320C54x 3.3V Operating Supply Voltage Access Times of 10, 12 and 15ns Single Write Control and Output Enable Lines One Chip Enable Line per Memory Bank 50% Space Savings vs. Monolithic TSOPs Upgrade Path Available in Same Footprint Multiple VCC and VSS Pins Reduced Inductance and Capacitance 74 pin BGA, JEDEC MO-151 The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access times as fa...

Document Datasheet EDI8L21664V Data Sheet
PDF 90.09KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 EDI8L24128C
White Electronic
128Kx24 Asynchronous SRAM Datasheet
2 EDI8L24129V
White Electronic
128Kx24 SRAM 3.3 Volt Datasheet
3 EDI8L32128C
ETC
128Kx32 CMOS High Speed Static RAM Datasheet
4 EDI8L32256C
EDI
Static Ram Datasheet
5 EDI8L32512C
ETC
512K X 32 CMOS HIGH SPEED STATIC RAM Datasheet
More datasheet from EDI



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact