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I/O0-7 A0-18 WE# CS# OE# VCC VSS NC Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power (+5V ±10%) Ground Not Connected BLOCK DIAGRAM Memory Array Address Buffer Address Decoder I/O Circuits I/OØ-7 Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp EDI88512CA-XMXG WPS512K8X-XRJXG ABSOLUTE MAXIMUM RATINGS .
512Kx8 bit CMOS Static
Random Access Memory
• Access Times of 17, 20, 25ns
• Data Retention Function (LPA version)
• Extended Temperature Testing
• Data Retention Functionality Testing
36 lead JEDEC Approved Revolutionary Pinout
• Plastic SOJ (Package 319)
Single +5V (±10%) Supply Operation
RoHS compliant
WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.
Extended temperature testing is performed with the test patterns develop.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EDI88512CA |
ETC |
512Kx8 Monolithic SRAM/ SMD 5962-95600 |
|
| 2 | EDI88512CA |
Microsemi |
512Kx8 Monolithic SRAM |
|
| 3 | EDI88512C |
Microsemi |
512Kx8 Monolithic SRAM |
|
| 4 | EDI8808CA35 |
EDI |
High Speed 64K Monolithic SRAM |
|
| 5 | EDI8808CA45 |
EDI |
High Speed 64K Monolithic SRAM |
|
| 6 | EDI8808CA55 |
EDI |
High Speed 64K Monolithic SRAM |
|
| 7 | EDI8808CA70 |
EDI |
High Speed 64K Monolithic SRAM |
|
| 8 | EDI8810H |
EDI |
Low Power 6T CMOS Monolithic SRAM |
|
| 9 | EDI8810L |
EDI |
Low Power 6T CMOS Monolithic SRAM |
|
| 10 | EDI88128C |
ETC |
128K X 8 STATIC RAM CMOS MONOLITHIC |
|
| 11 | EDI88128C |
White Electronic Designs |
128Kx8 MONOLITHIC SRAM |
|
| 12 | EDI88128CS |
White Electronic Designs |
128Kx8 Monolithic SRAM |
|