E111A - Siliconix

E111A n-channel JFET

n-channel JFETs designed for • • • Analog Switches •• Choppers • Commutators H Performance Curves NC See Section 4 -m -» -m BENEFITS • Low Inserti on Loss rDS(on) < 30 n (E111A) • High Off-Isolation ID(off) < 200 pA • No Error or Offset Voltages Generated --» ~ m »w by Closed Switch Purely Resistive ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-.

Features

: T VGSloffl I~A BVGSS 4 T lOSS I-I I~C IOloffl 6 rOS(on) 7 Cdgloffi lao Csg(off) I-V N Cdglonl 9 + Csg(on) Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage Saturation Drain Current (Note 2) Drain Cutoff Current (Note 1) Drain Source ON Resistance Drain Gate OFF Capacitance Source
·Gate OFF Capacitance Drain Gate Plus Source Gate ON Capacitance ElllA Min Max -200 -5 -10 --40 30 200 30 5 5 28 El12A Min Max -200 -2 -7 -40 15 200 50 5 5 28 El13A Min Max -200 -1 -5 --40 8 200 80 5 5 28 Unit Test Conditions pA VOS=O,VGS=-15V VOS=5V,IO=1p.A V VOS=.