E110 - Siliconix

E110 n-channel JFET

n-channel JFETs designed for • • • • Analog Switches • Choppers • Commutators • Low Noise Audio Amplifiers -m Ho C» Performance Curves NIP See Sedion 4 -m ~ BENEFITS • Low Insertion Loss RDS(on) < 8 S1 (El08) • No Offset or Error Voltages Gener- -m o ated by Closed Switch Purely Resistive High Isolation Resistance from Driver • Fast Switching td(on).

Features

R d S ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic El08 El09 E110 Unit Min Typ Max Min Typ Max Min Typ Max Test Conditions 1 IGSS Gate Reverse Current (Note 1) -S .2T VGSiolfi Gate-Source Cutoff Voltage -3 3 A BVGSS Gate-Source Breakdown Voltage -25 -3 -10 -2 -25 4'T -I ~C 6 IDSS IDioffl rOS(on} Saturation Drain Current (Note 2) 80 Drain Cutoff Current (Note 1) Drain-Source ON Resistance 40 3 8 7 Cdgioffl 8' Csg(off) -0 y Cdg(on) 9N + - A Csg(on) 10M td(on) Drain-Gate OFF Capacitance Source-Gate OFF Capacitance Drain-Gate Plus Source-Gate ON Cap.